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New concept for post-CMOS pellistor integration

机译:后CMOS光电二极管集成的新概念

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Gas sensors are crucial instruments to detect the exposure of combustile and toxic gases at an early stage. The relevance to manufacture gas sensors decreasing in size and power consumption is growing continuously to reduce production costs and enable reliable handheld devices. This paper presents a new approach for processing a novel nano-pellistor. The production is based on a process used for fabricating 3D-nanostructures. A process sequence is presented which uses atomic layer deposition (ALD) and deep reactive ion etching (DRIE) to build a free-standing gas sensor above a CMOS circuit. Simulations are performed to ensure the most promising performance of the sensors. A square shape structure is the most advantageous heater with a homogeneous heat distribution. Furthermore, an expected heater power consumption of 7.18mW is determined by simulations. The investigations on the influence of an insulation layer enclosing the heater show that the temperature difference on the heater decreases from 28 deg C (assumed in air) to 11 deg C. A change in the pillar shape for contacting the gas sensor reduces the current density from 1.33·10(exp 11) A/m2 to 4.36·10(exp 10) A/m2.
机译:气体传感器是在早期检测可燃气体和有毒气体暴露的关键仪器。制造尺寸减小和功耗减小的气体传感器的重要性不断提高,以降低生产成本并实现可靠的手持设备。本文提出了一种处理新型纳米薄膜晶体管的新方法。该生产基于用于制造3D纳米结构的过程。提出了使用原子层沉积(ALD)和深反应离子刻蚀(DRIE)来在CMOS电路上方构建独立式气体传感器的过程序列。进行仿真以确保传感器的最有希望的性能。方形结构是具有均匀热量分布的最有利的加热器。此外,通过仿真确定了预期的加热器功耗为7.18mW。对包围加热器的绝缘层影响的研究表明,加热器上的温差从28摄氏度(在空气中假设)降低到11摄氏度。用于与气体传感器接触的支柱形状的变化降低了电流密度从1.33·10(exp 11)A / m2到4.36·10(exp 10)A / m2。

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