Plasma-induced charge damage and its effect on reliability in 0.115-μm technology

摘要

Plasma-induced damage on 0.115 μm Cu dual damascene technology devices is investigated. The metal-via-metal structure shows more plasma damage than other metal structures. Plasma damage has little impact on NMOSFET hot carrier degradation. For PMOSFET NBTI degradation, the plasma damage on thick oxide is clearly observed.