PLASMA-INDUCED CHARGE DAMAGE CONTROL FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES

摘要

A plasma-induced charge damage control method for a plasma enhanced chemical vapor deposition process is provided to reduce plasma-induced charge damage by reacting a hydrocarbon compound in the presence of RF(Radio Frequency) power and depositing a bulk amorphous carbon film on an initiation layer at a second RF power level. A method of depositing an amorphous carbon film comprises the steps of: introducing a hydrocarbon compound into a chamber(201); reacting the hydrocarbon compound in the presence of RF(Radio Frequency) power comprising a first RF power level between about 0.01 W/cm^2 and about 2 W/cm^2 for a period of time to deposit an initiation layer of an amorphous carbon film on a substrate in the chamber(203); and depositing a bulk amorphous carbon film on the initiation layer at a second RF power level(205). The second RF power level is greater than the first RF power level. The RF power is ramped up during the deposition of the initiation layer.