Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System

摘要

Instead of selective emitter technology we investigate an alternative way to optimize contact formation and increased blue responsivity of highly resistive emitter solar cells using screen print technology for the deposition of the frontside metallization grid. We show with the aid of an inline doping/diffusion set-up at Blue Chip Energy that tuning the emitter doping profile is an alternative way to reduce the effect of Auger recombination in the spectral range from 300 nm to 600 nm. By properly choosing the process conditions we were able to minimize the detrimental effect of the low surface concentration of the dopant on the contact resistance. Due to improved blue light responsivity a significant gain in short circuit current J_(sc) was achieved. This and a reduced reverse saturation current I_(00E) yielded a higher open circuit voltage V_(oc) and an increase of cell efficiency from 17.6 %-avg to more than 17.9 %-avg.