Highly concentrated P-doped quantum dot solar cell obtained by actively doping INP and production method thereof

摘要

Provided is a manufacturing method for a semiconductor quantum dot-sensitized solar cell. More specifically, the manufacturing method according to the present invention comprises: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate, and then performing a heat treatment on the substrate including the semiconductor layer formed thereon to form indium (FIG. In) thereof, thereby forming an n-type semiconductor quantum dot which is a phosphorus (P) -doped group 4 element quantum dot.