Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals

摘要

Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen interstitials, Oi's, at 9×10~(l7)cm~(-3) level, were investigated, after processing for 5 h at up to 1400 K (HT) under Ar pressure to 1.1 GPa (HP), by X-ray, synchrotron, infrared and photoluminescence methods. To create nucleation centres for O_i's precipitation, some samples were pre-annealed for 10 h at 1000 K under 10~5 Pa. HT-HP treatment at 1230/1400 K results in improved sample homogeneity and crystallographic perfection. HT-HP induced changes in Si-Ge are related mainly to HP-stimulated diffusivity of Ge.