Structural perfection of Czochralski grown silicon crystals annealed above 1500 K under hydrostatic pressure

摘要

The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10~9 Pa was investigated by X-ray diffractometry and topography supplemented by the method of adsorption of infrared ray. Such treatment suppresses dissolution of oxygen- related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.