GaN based Optoelectronic Devices: From ultraviolet detectors and visible emitters towards THz intersubband devices

摘要

Ⅲ-Nitride material system (AlGaInN) possesses unique optical, electrical and structural properties such as a wide tunable direct bandgap, large longitudinal optical phonon energy, inherit fast carrier dynamics; good carrier transport properties, high breakdown fields; and high robustness and chemical stability. Thanks to these inherit advantages, they are investigated for everyday to military and scientific applications such as illumination sources; bio-agent detection, concealed weapons/drugs detection; and space exploration. With continuous developments in material growth/characterization and device processing/measurement technologies, gap engineered Ill-Nitride materials extend their unique solutions from ultraviolet and visible regime towards THz spectra.