Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
non-polar; InGaN/GaN MQWs; optical polarization; strain;
机译:通过横向外延过生长制备的GaN模板上生长的非极性(1120)InGaN / GaN多量子阱中的激子动力学
机译:纳米棒横向过度生长模板上生长的A平面InGaN / GaN多量子阱的光学性质
机译:在通过横向外延过度生长制备的GaN模板上生长的非极性m平面In_xGa_(1-x)N / GaN多量子阱中的辐射寿命和非辐射寿命
机译:纳米尺度外延横向过生长技术表征蓝宝石衬底上生长的InGaN / GaN多量子阱
机译:氮化镓的外延横向过长的实验研究和氮化镓金属有机化学气相沉积过程的模拟。
机译:GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
机译:纳米棒侧向过生长模板上生长的a面InGaN / GaN多量子阱的光学特性