Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617;
Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617;
机译:垂直GaN / InGaN LED的电流扩散效应和光提取增强的研究
机译:具有n型AlGaN / GaN / InGaN电流扩散层的InGaN LED的效率增强
机译:通过插入和优化n-InGaN / GaN复合电流扩展层来增强GaN基发光二极管的性能
机译:垂直GaN / Ingan LED中的电流展淡效果
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:减少InGaN / GaN微发光二极管疏透缩小量子屏障的替代策略以管理电流展开
机译:具有p-GaN / n-GaN / p-GaN / n-GaN / p-GaN电流扩散层的改进型InGaN / GaN发光二极管
机译:经受高电流脉冲的蓝色alGaN / InGaN / GaN LED的劣化