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GaN-based light emitting diode with current spreading structure
GaN-based light emitting diode with current spreading structure
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机译:具有电流扩散结构的GaN基发光二极管
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摘要
A GaN-based LED with a current spreading structure, the LED including a substrate, a light-emitting epitaxial layer over the substrate, and a current spreading structure over the light-emitting epitaxial layer. The current spreading structure includes a transparent electrode spreading bar, and a metal electrode spreading bar attached to the side wall of the transparent electrode spreading bar. The current spreading structure can improve the current spreading effect, reducing or eliminating of electrode shading, improving luminous efficiency of the LED, and avoid or reduce high voltage (Vf).
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