Nano-ultrasonic based on GaN nano-layers

摘要

We review our current development on nano-ultrasonic by using piezoelectric nano-layers based on the GaN material system. Our study indicated that piezoelectric semiconductor nanostructures can serve as optical piezoelectric transducers to generate and detect nanoacoustic waves through the piezoelectric effect. The nanoacoustic waves, with a wavelength on the order of or shorter than 10 nm, can be used for high accuracy THz electron control, noninvasive sub-nanometer interface probing, and nano-ultrasonic imaging. Detailed design principles and the applications to the study of lattice/molecular dynamics in condense matters are discussed.