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Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

机译：基于物理的TCAD模拟和校准600 V GaN / AlGaN / GaN器件特性及界面陷阱分析

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Yu-Lin Song; Manoj Kumar Reddy; Luh-Maan Chang; Gene Sheu;
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年度 2021
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1. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [J] . Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Electron Devices Society, IEE . 2017,第3期

机译：通过低频S参数测量和基于TCAD的物理设备仿真识别微波功率AlGaN / GaN HEMT中的GaN缓冲阱
2. Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations [J] . Miccoli, C., Martino, IEEE Electron Device Letters . 2013,第9期

机译：TCAD模拟对AlGaN / GaN HEMT的俘获和热效应分析
3. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices [J] . Mukherjee K., Darracq F., Curutchet A., Microelectronics & Reliability . 2017,第sepa期

机译：TCAD仿真功能可用于高级AlGaN / GaN HEMT器件的栅极泄漏电流分析
4. Physics Based TCAD Simulation and Calibration of GaN/AlGaN/GaN HEMT Device [C] . Manoj Kumar Reddy, Jhansi Lakshmi, Atluri Hemanth, International Conference on Systems and Informatics . 2019

机译：GaN / AlGaN / GaN HEMT器件的基于物理的TCAD仿真和校准
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study [O] . Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, 2020

机译：具有铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和工作特性：仿真研究
7. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [O] . Subramani, Nandha Kumar, Couvidat, Julien, Hajjar, Ahmad Al, 2017

机译：通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

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