Bandgap widening of β-FeSi2 deposited by RF-sputtering method using a Si-rich FeSi4 target

摘要

β-FeSi2 films were deposited on silicon substrates by RF-sputtering method with a Si-rich FeSi4 target and optical absorption properties of the films were investigated. Direct bandgap of the β-FeSi2 films deposited using an FeSi4 target was larger than that using an FeSi3 target because Si crystals were formed in the films deposited using a Si-rich FeSi4 target.