Electrical property of DNA field-effect transistor; Charge retention property

摘要

We discovered the charge retention property of the field-effect transistor (FET) in a Si gate/SiO2/DNA channel structure. The DNA FET with the Si source and drain showed hole conduction, and the drain current was controlled by the gate voltage application. By inserting the refresh process of gate voltage application of −50V between each measurement, the current increase was restrained. This phenomenon indicates that the trap and detrap process of electrons occurs in the DNA channel depending on the gate voltage application. The charge retention mechanism was also discussed.