TEM observation of directly bonded interface between Si and SiC

摘要

We developed an engineered wafer, a Si-on-SiC wafer, in which a Si wafer is directly bonded to single-crystalline 6H-SiC. A remarkable improvement in heat dissipation performance and a 60% reduction in the self-heating effect of Si MOSFET were demonstrated in Si-on-SiC wafer. In this work, Si/SiC directly bonded interface of Si-on-SiC wafers by transmission electron microscope (TEM).