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Influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells

机译:镍膜厚度对硅太阳能电池暗电流-电压特性的影响

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摘要

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for lmin, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.
机译:本文分析了不同厚度的镍膜厚度分别为200nm,400nm和600nm的硅太阳能电池p-n结的暗电流-电压特性。经过1min,5min和10min的热退火处理后,形成了硅化镍。实验中获得了三种退火温度随时间变化的暗电流-电压曲线。在较高电压范围内,观察到了从暗电流-电压曲线提取的串联电阻的改善。证实了镍膜厚度对硅太阳能电池的暗电流-电压特性的影响。

著录项

  • 来源
  • 会议地点 Kunming(CN);Kunming(CN)
  • 作者单位

    The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, CAS, Beijing 100190, China;

    The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, CAS, Beijing 100190, China;

    The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, CAS, Beijing 100190, China;

    The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, CAS, Beijing 100190, China;

    Chinalight Solar Co. Ltd., Beijing 101111, China;

    Chinalight Solar Co. Ltd., Beijing 101111, China;

    Chinalight Solar Co. Ltd., Beijing 101111, China;

    Chinalight Solar Co. Ltd., Beijing 101111, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

    nickel film; dark current-voltage characteristics; light-induced plating; silicon solar cells;

    机译:镍膜暗电流-电压特性;光诱导镀层;硅太阳能电池;

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