首页> 外文会议>Frequency Control Symposium (FCS), 2012 IEEE International >Zero temperature coefficient of frequency in extensional-mode highly doped silicon microresonators
【24h】

Zero temperature coefficient of frequency in extensional-mode highly doped silicon microresonators

机译:扩展模式高掺杂硅微谐振器的频率零温度系数

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

For the first time we demonstrate the existence of a turnover temperature in extensional-mode silicon microresonators, fabricated on highly n-type doped substrates and aligned to the [100] crystalline orientation. This behavior is commonly observed in quartz resonators and is a key to achieving exceptional temperature stability in oven-controlled crystal oscillators. In order to show the effect of doping concentration and resonator alignment to different crystalline orientations, the thin-film piezoelectric-on-silicon (TPoS) platform is utilized. It is shown through both theoretical analysis and finite element simulation that the turnover temperature is a function of doping concentration and orientation. In order to experimentally validate this result, similar resonators are fabricated on silicon-on-insulator (SOI) substrates and the temperature variation of frequency is measured. The trends are shown to agree with theory. An overall temperature-induced frequency variation of less than 150ppm is measured over the range of −40 to 85°C for a ∼25MHz TPoS resonator aligned to the [100] plane; this shows more than 24 fold reduction with respect to the uncompensated conventional silicon resonators reported before. Our work is a significant step toward strengthening silicon''s position as an alternative resonator technology in the quartz-dominated stable oscillator market.
机译:首次我们证明了在延伸模式硅微谐振器中存在周转温度,该谐振器是在高度n型掺杂的衬底上制造的,并与[100]晶向对齐。这种现象通常在石英谐振器中观察到,并且是在烤箱控制的晶体振荡器中实现出色的温度稳定性的关键。为了显示掺杂浓度和谐振器对准不同晶体取向的影响,利用了薄膜压电硅(TPoS)平台。通过理论分析和有限元模拟都表明,转换温度是掺杂浓度和取向的函数。为了通过实验验证该结果,在绝缘体上硅(SOI)基板上制造了类似的谐振器,并测量了频率的温度变化。趋势表明与理论一致。对于在与[100]平面对齐的〜25MHz TPoS谐振器,在-40至85°C的范围内,测得的总温度引起的频率变化小于150ppm。与以前报道的未补偿的常规硅谐振器相比,这显示出减少了24倍以上。我们的工作迈出了重要的一步,巩固了硅在石英为主的稳定振荡器市场中作为替代谐振器技术的地位。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号