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Micro-Scale Metallization of Cu and Au on Flexible Polyimide Substrate by Electroplating Using SU-8 Photoresist Mask

机译:使用SU-8光刻胶在柔性聚酰亚胺基板上电镀铜和金的微量金属化

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摘要

In order to fabricate flexible microelectronic devices, fabrication of metallization lines and metal electrodes on the flexible substrate is essential. Cu lines are often used as interconnect lines in electronic devices and Au as microelectrodes in organic transistors and bioelectronics devices due to its good electrochemical stability and biocompatibility. For minimizing the size of device, the realization of metallization lines and microelectrodes with the scale of a few micrometers on the flexible substrate is very important. In this work, micro-scale metallization lines of Cu and Au were fabricated on the flexible polyimide (PI) substrate by electroplating using the patterned mask of a negative-tone SU-8 photoresist. Surface of PI substrate was treated by O_2 inductively coupled plasma for improvement in the adhesion between the Cr layer and the PI and in-situ sputter-deposition of 100-nm-thick Cu seed layers on the sputter-deposited 50-nm-thick Cr adhesion layer was followed. Electroplating of Cu and Au lines using a sulfuric acid and a noncyanide solution with the patterned SU-8 mask, respectively, removal of SU-8, and selective wet etch of Cr adhesion and Cu seed layers were carried out. Micro-scale Au electrode lines were successfully fabricated on the PI substrate. Micro-scale gap-filled Cu lines with spin-coated polyimide on the PI substrate with the thickness of 6 ~ 12 μm and the aspect ratio of 1~3 were successfully fabricated.
机译:为了制造柔性微电子器件,在柔性基板上制造金属化线和金属电极是必不可少的。铜线由于其良好的电化学稳定性和生物相容性,常被用作电子设备中的互连线,而金被用作有机晶体管和生物电子设备中的微电极。为了使装置的尺寸最小化,在柔性基板上实现几微米规模的金属化线和微电极的实现非常重要。在这项工作中,通过使用负型SU-8光致抗蚀剂的图案化掩模进行电镀,在柔性聚酰亚胺(PI)基板上制作了微型尺寸的Cu和Au金属化线。用O_2感应耦合等离子体处理PI衬底的表面,以改善Cr层与PI之间的附着力,并在溅射沉积的50 nm厚度的Cr上原位溅射100 nm厚度的Cu籽晶层。紧接着粘附层。分别使用硫酸和非氰化物溶液分别在有图案的SU-8掩模上电镀Cu和Au线,除去SU-8,并对Cr附着层和Cu籽晶层进行选择性湿法蚀刻。在PI基板上成功制作了微型Au电极线。成功地在PI衬底上制备了旋涂聚酰亚胺的微米级间隙填充Cu线,厚度为6〜12μm,长径比为1〜3。

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