...
首页> 外文期刊>Thin Solid Films >Micro-scale metallization on flexible polyimide substrate by Cu electroplating using SU-8 photoresist mask
【24h】

Micro-scale metallization on flexible polyimide substrate by Cu electroplating using SU-8 photoresist mask

机译:使用SU-8光刻胶掩模通过铜电镀在柔性聚酰亚胺基板上进行微型金属化

获取原文
获取原文并翻译 | 示例

摘要

Technologies for flexible electronics have been developed to make electronic or microelectromechanical (MEMS) devices on inexpensive and flexible organic substrates. In order to fabricate the interconnect lines between device elements or layers in flexible electronic devices, metallization on the flexible substrate is essential. In this case, the width and conductivity of metallization line are very important for minimizing the size of device. Therefore, the realization of metallization process with the scale of a few micrometers on the flexible substrate is required. In this work, micro-scale metallization lines of Cu were fabricated on the flexible substrate by electroplating using the patterned mask of a negative-tone SU-8 photoresist. Polyimide surface was treated by O-2/Ar atmospheric plasma for the improvement in adhesion between Cr layer and polyimide and in situ sputter deposition of 100-nm-thick Cu seed layers on the sputter-deposited 50-nm-thick Cr adhesion layer was followed. SU-8 photoresist was spin-coated and patterned by photolithography. Electroplating of Cu line, removal of SU-8, and selective wet etch of Cr adhesion and Cu seed layers were carried out. Gap between the Cu lines was successfully filled by spin-coating of polyimide. Micro-scale Cu metal lines with gap filling on the polyimide substrate with a thickness of 6-12 mum and an aspect ratio of 1-3 were successfully fabricated. (C) 2004 Elsevier B.V. All rights reserved.
机译:已经开发了用于柔性电子的技术,以在廉价且柔性的有机基板上制造电子或微机电(MEMS)器件。为了在柔性电子器件中的器件元件或层之间制造互连线,在柔性衬底上的金属化是必不可少的。在这种情况下,金属化线的宽度和导电性对于最小化器件尺寸非常重要。因此,需要在柔性基板上实现几微米规模的金属化工艺。在这项工作中,通过使用负型SU-8光致抗蚀剂的图案化掩模进行电镀,在柔性基板上制造了微型的Cu金属化线。通过O-2 / Ar大气等离子体处理聚酰亚胺表面,以改善Cr层与聚酰亚胺之间的附着力,并在溅射沉积的50 nm厚Cr附着层上原位溅射沉积100 nm厚的Cu籽晶层。跟着。 SU-8光致抗蚀剂被旋涂并通过光刻法图案化。进行了铜线的电镀,SU-8的去除以及Cr附着力和Cu籽晶层的选择性湿法蚀刻。通过旋涂聚酰亚胺成功地填充了铜线之间的间隙。成功地在聚酰亚胺基板上制作了厚度为6-12μm,纵横比为1-3的间隙填充的微型Cu金属线。 (C)2004 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号