Study On Ge2Sb1.5Bi0.5Te5: An Inorganic Photoresist Possessed Both Positive And Negative Resist Characteristics

摘要

In this paper, phase change material Ge2Sb1.5Bi0.5Te5 (GSBT) is studied as an inorganic photoresist. The experimental results show that amorphous state and crystalline state of the material, which can be produced easily by a laser direct writing (LDW) system, have very different etching characteristic. The GSBT can act as both positive and negative photoresist through development in different developing solution. Moreover, reactive ion etching technology was applied to transfer formed patterns and structures onto the SiO2 substrate.