Phase change material Ge_2Sb_(1.5)Bi_(05)Te_5 possessed of both positive and negative photoresist characteristics

摘要

The phase change material Ge_2Sb_(1.5)Bi_(05)Te_5 (GSBT) has been studied as an inorganic photoresist. The experimental results show that the GSBT can be easily induced from the as-deposition amorphous state to the crystalline state by thermal annealing or laser, and the difference of the etching properties between the amorphous and the crystalline state is particularly large. More importantly, the GSBT demonstrates an interesting characteristic possessed of both positive and negative photoresists based on different developing solutions. In addition, reactive ion etching technology can be applied to transfer formed GSBT patterns onto the underlay SiO_2 substrates, showing practical applicability of the material in microelectronics.