EFFECT OF GAS PHASE NUCLEATION ON SILICON CARBIDE CHEMICAL VAPOR DEPOSITION

摘要

The conventional heat and mass transport model is extended to describe silicon cluster formation in the gas phase and is employed for a numerical analysis of SiC CVD in a commercial vertical rotating disc reactor. The model is verified by comparing the computed growth rate with available experimental data. The transition of the gas flow from a laminar to an unstable regime is treated for two different inlet flanges. The model predicts a drastic reduction in the growth rate at a higher silane flow rate due to silicon gas-to-particle conversion. The flow pattern is shown to become essentially three-dimensional when precursors are supplied through a slit at the reactor inlet.