首页> 外文会议>Fifteenth International Symposium on Chemical Vapor Deposition, May 14-18, 2000, Toronto, Ontario >A COMPARISON OF COMMONALITIES AND DIFFERENCES OF SILICON-BASED THIN FILMS CVD PROCESSES FOR ULSI DEVICE TECHNOLOGY
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A COMPARISON OF COMMONALITIES AND DIFFERENCES OF SILICON-BASED THIN FILMS CVD PROCESSES FOR ULSI DEVICE TECHNOLOGY

机译:硅基薄膜技术在硅基薄膜工艺中的共性和差异比较

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摘要

Basic film step coverage and gap-fill data has been consolidated and compared with the observed silicon-based CVD kinetics trends based on some assumptions regarding reaction kinetics and mechanism. Obtained correlations are believed to be applicable for further optimization of ultra small gap filling in advanced ULSI technology.
机译:基本的薄膜台阶覆盖率和间隙填充数据已得到巩固,并根据有关反应动力学和机理的一些假设与观察到的基于硅的CVD动力学趋势进行了比较。据信所获得的相关性可用于进一步优化高级ULSI技术中的超小间隙填充。

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