CHARACTERIZATION OF EPITAXIAL Pb(Zr_x,Ti_(1-x))O_3 THIN FILMS WITH COMPOSITION NEAR THE MORPHOTROPIC PHASE BOUNDARY

摘要

200-nm-thick Pb(Zr_x,Ti_(1-x))O_3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)_c SrRuO_3 (SRO)//SrTiO_3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.