Electrical Characterization of Partially Insulated MOSFETs with Buried Insulators under Source/Drain Regions

摘要

In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET) for ultimate scaling of planar MOSFET through the simulation and the fabrication. The newly fabricated PiFET showed the outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be good to be an alternative for ultimate scaling of planar MOSFET.