Method for manufacturing semiconductor element for e.g. CPU, involves providing buried insulating layer under active region of substrate, removing part of oxidized material and forming drain- and source regions in active region

摘要

The method involves forming a semiconductor material i.e. germanium, on a silicon-containing semiconductor base material (203B) e.g. silicon material or silicon/germanium material, of an active region (203A) of a substrate (201). A buried insulating layer (202) is provided under the active region. A part of the semiconductor material is oxidized such that the semiconductor material is driven into the base material up to the insulating layer. A part of the oxidized semiconductor material is removed, and drain- and source regions and recesses (204) are formed in the active region. Independent claims are also included for the following: (1) a method for manufacturing a transistor (2) a semiconductor element comprising a silicon-containing channel region.