Statistical modelling of electron devices based on an equivalent-voltage approach

摘要

Active device modelling and statistical description of the device behaviour are two key aspects in the design of high-yield integrated circuits. A new empirical approach is here proposed which is capable of describing the effects of process parameter variations on the electron device electrical response by means of only a few statistical parameters. The model can be easily identified on the basis of conventional electrical measurements. Preliminary validation results from experimental data, simulations using the Trew analytical model and simulations of a modified Curtice model are provided in the paper.