Statistical modelling of electron devices based on an equivalent-voltage approachud

摘要

Active device modelling and statistical description of the device behaviour are two key aspects in the design of high-yield integrated circuits.A new empirical approach is here proposed which is capable of describing the effects of process parameter variations on the electron device electrical response by means of only a few statistical parameters.The model can be easily identified on the basis of conventional electrical measurements.Preliminary validation results from experimental data,simulations using the Trew analytical model and simulations of a modified Curtice model are provided in the paper.