BV_(CEO) versus BV_(CBO) for 4H and 6H Polytype SiC Bipolar Junction Transistors

摘要

The letter presents a set of design curves that relate the open-base breakdown voltage BV_(CEO) to the open emitter breakdown voltage BV_(CBO) for 4H (0001 and 11-20 orientations) and 6H SiC NPN and PNP Bipolar Junction Transistors. We also present design curves pertaining to the variation of BV_(CEO) with base doping and minority carrier diffusion length in the base for (0001) 4H-SiC BJTs for a 4x10~(15) cm~(-3) doped and 12 μm thick drift layer for both NPN and PNP BJTs.