Modeling of Lattice Site-Dependent Incomplete lonization in α-SiC Devices

摘要

In contrast to narrow bandgap semiconductors such as silicon, common doping elements in SiC have activation energies larger than the thermal energy k_BT even at room temperature. Inequivalent α-SiC sites, one with cubic (k) surrounding and the other with hexagonal (h) surrounding are expected to cause site-dependent impurity levels. Therefore, an appropriate incomplete ionization model which accounts for lattice site-dependent ionization level of impurities in α-SiC has been developed and implemented in the general-purpose device simulator MINIMOS-NT.