The V_(Si)C_(Si)(Si_CC_(Si)) Complex in Electron-irradiated 6H-SiC

机译：电子辐照6H-SiC中的V_（Si）C_（Si）（Si_CC_（Si））络合物

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We identify the V_(Si)C_(Si)(Si_CC_(Si)) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and supported by theoretical calculations, it was possible to establish its microscopic structure and to conclude that this complex is formed from the first product of the Si-vacancy annealing, the V_(Si)C_(Si) complex (also known as P6/P7 centers).

机译：我们确定了电子辐照6H-SiC样品中的V_（Si）C_（Si）（Si_CC_（Si））络合物。基于对新的光激发EPR光谱的分析并得到理论计算的支持，可以建立其微观结构并得出结论，该络合物是由硅空位退火的第一个产物V_（Si）形成的C_（Si）配合物（也称为P6 / P7中心）。

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来源
《European Conference on Silicon Carbide and Related Materials(ECSCRM 2004); 20040831-0904; Bologna(IT) 》|2004年|P.477-480|共4页
会议地点 Bologna(IT)
作者
M.V.B. Pinheiro; E. Rauls; U. Gerstmann; S. Greulich-Weber; J.-M. Spaeth;
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作者单位

Departamento de Fisica, Universidade Federal de Minas Gerais, Av. Antonio Carlos, 6627, CP702, 30.123-970, Belo Horizonte, MG, Brasil;

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会议组织
原文格式 PDF
正文语种 eng
中图分类材料 ; 第Ⅳ族非金属元素（碳和硅）及其化合物 ;
关键词
V_(Si)C_(Si)(Si_CC_(Si)) complex; EPR; Si-vacancy; annealing; electron-irradiation; SiC;

机译：V_（Si）C_（Si）（Si_CC_（Si））络合物; EPR;硅空位;退火;电子辐照; SiC;

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1. Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency [J] . N. lwamoto, A. Koizumi, S. Onoda, Materials science forum . 2012 ,第PTa1期

机译：用α粒子感应电荷瞬态光谱研究电子辐照6H-SiC二极管中的缺陷：它们对降低的电荷收集效率的影响
2. Defect characterization in electron-irradiated 6H-SiC by positron annihilation [J] . Polity A., Lausmann M., Huth S. Physical Review, B. Condensed Matter . 1999 ,第16期

机译：正电子an没法表征电子辐照6H-SiC中的缺陷
3. A New Mobility Extraction Technique Based on Simultaneous Ultrafast $I_{d}$–$V_{g}$ and $C_{rm cg}$– $V_{g}$ Measurements in MOSFETs [J] . Ji Z. Electron Devices, IEEE Transactions on . 2012 ,第7期

机译：基于同时超快$ I_ {d} $ – $ V_ {g} $和$ C_ {rm cg} $ – $ V_ {g} $测量MOSFET的新迁移率提取技术
4. The V_(Si)C_(Si)(Si_CC_(Si)) Complex in Electron-irradiated 6H-SiC [C] . M.V.B. Pinheiro, E. Rauls, U. Gerstmann European Conference on Silicon Carbide and Related Materials . 2005

机译：电子辐照的6H-SiC中的V_（SI）C_（SI）（SI_CC_（SI））复合物
5. Simulation and comparison of 3C-SiC, 6H-SiC and 4H-SiC nanowire fets performance. [D] . Hasan, Rajib Ul. 2015

机译：模拟和比较3C-SiC，6H-SiC和4H-SiC纳米线的性能。
6. A Nanomechanical Analysis of Deformation Characteristics of 6H-SiC Using an Indenter and Abrasives in Different Fixed Methods [O] . Jisheng Pan, Qiusheng Yan, Weihua Li, 2019

机译：压头和磨料在不同固定方法下对6H-SiC变形特性的纳米力学分析
7. STM imagery and density functional calculations of $C_{60}$ fullerene adsorption on the 6H-SiC(0001)-3×3 surface [O] . Ovramenko T., Spillebout F., Bocquet F., 2013

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8. Infrared Absorption of Oxygen Complexes in Electron-Irradiated Silicon [R] . Svensson, J. 1985

机译：电子辐照硅中氧配合物的红外吸收

The V_(Si)C_(Si)(Si_CC_(Si)) Complex in Electron-irradiated 6H-SiC

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