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Nikon EUVL development progress summary

机译:尼康EUVL开发进度摘要

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Extreme Ultra Violet Lithography (EUVL) is considered as the most promising technology below hp45nm node, following ArF immersion lithography. In this paper we would like to present significant progress on the development of EUV exposure tool with recent encouraging data of mirror polishing accuracy and evaluation results of Nikon reticle protection concept. EUV exposure tool consists of major important modules such as EUV light source, projection optics, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA), our mirror polishing and metrology technologies of aspheric mirror surface and multi-layer coating technology have been remarkably improved and enable us to fabricate high-precision aspheric mirrors which meet the specification for EUV pre-production tools called EUV1. In the EUVA (Extreme Ultraviolet Lithography System Development Association) project, we have developed new polishing technologies such as ion-beam figuring and new high-precision interferometers for aspheric surface metrology. Wave front sensor systems have been also developed partly in EUVA project. Installation of a new wave front sensor system which can be used for evaluating the full-field projection optics with EUV light has already been started in New SUBARU synchrotron facility in University of Hyogo. EUV1 tool system design and its detailed design of all modules such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules have been completed. The results of development and prototyping of major modules such as vacuum stage modules and vacuum body module have been reflected in the actual tool design. Nikon has been also heavily involved in the infrastructure development such as mask handling development. In order to meet industry demands, Nikon has been already getting into EUV1 module fabrication phase. Nikon announces that EUV1 tool is scheduled to be delivered in 1st half of 2007.
机译:继ArF浸没式光刻之后,极紫外光刻(EUVL)被认为是hp45nm节点以下最有前途的技术。在本文中,我们希望借助最近令人鼓舞的镜面抛光精度数据和尼康标线片保护概念的评估结果,来展示EUV曝光工具的开发方面的重大进展。 EUV曝光工具由重要的重要模块组成,例如EUV光源,投影光学器件等。就EUVL光学系统的发展而言,通过开发高NA小视场EUV曝光系统(HiNA),我们非球面镜面的镜面抛光和计量技术以及多层镀膜技术得到了显着改善,使我们能够制造符合EUV预先生产工具EUV1规范的高精度非球面镜。在EUVA(极端紫外线光刻系统开发协会)项目中,我们开发了新的抛光技术,例如离子束计算和用于非球面表面计量的新型高精度干涉仪。波前传感器系统也已在EUVA项目中部分开发。在兵库大学的新SUBARU同步加速器设施中,已经开始安装新的波前传感器系统,该系统可用于评估EUV光的全场投影光学系统。 EUV1工具系统设计及其所有模块的详细设计已完成,例如全场投影光学模块,照明光学模块,真空主体模块,真空兼容的标线/晶圆台模块,标线/晶圆装载器模块。主要模块(例如真空台模块和真空阀体模块)的开发和原型设计结果已经反映在实际的工具设计中。尼康还大量参与了基础设施的开发,例如口罩处理的开发。为了满足行业需求,尼康已经进入EUV1模块制造阶段。尼康宣布EUV1工具计划于2007年上半年交付。

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