Development of an Experimental EUVL System

摘要

The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength, which includes a laser plasma source, an ellipsoidal condenser, a transmission mask and a Schwarzschild optics. The optical system is optimized to achieve 0.1μm resolution over a 0.1mm diameter image field of view and the mirrors of the objective were coated with Mo/Si multilayer to provide 60% reflectance at near-normal incidence angle for 13.0nm radiation.