首页> 外文会议>Electronic Packaging Technology amp; High Density Packaging, 2009. ICEPT-HDP '09 >Absorption of Ag3Sn on Cu6Sn5 Intermetallic Compounds at Sn-3.5Ag-xCu/Cu Interfaces
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Absorption of Ag3Sn on Cu6Sn5 Intermetallic Compounds at Sn-3.5Ag-xCu/Cu Interfaces

机译:Ag3Sn在Sn-3.5Ag-xCu / Cu界面上的Cu6Sn5金属间化合物上的吸收

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摘要

The absorption behavior of Ag3Sn particles on the surface of intermetallic compounds (IMCs) formed at Sn-3.5AgxCu/ Cu (x=0, 0.7, 1.5 wt.%) interfaces was studied. The Sn-3.5Ag-xCu/Cu solder joints were prepared by reflow soldering at 260℃ for different time. The X-ray diffraction results showed that the dominant IMCs formed at Sn-3.5AgxCu/ Cu interfaces were Cu6Sn5. For Sn-3.5Ag/Cu and Sn-3.5Ag-0.7Cu/Cu joints, when the reflow time reached 120s and 60s respectively, besides Cu6Sn5, Ag3Sn particles were also found at the interface. While for all the reflow time in this study, the Ag3Sn particles were always detected at Sn-3.5Ag-1.5Cu/Cu interfaces. To observe the morphology of the interfacial IMCs, scanning electron microscope were performed. It was found that with the increase of the grain size of Cu6Sn5 the amount of absorbed Ag3Sn particles increased. During the solidification, the Ag3Sn particles could play the role of surface energy reducer for the interfacial Cu6Sn5 grains. There should be a critical grain size at which the absorption behavior of Ag3Sn particles on Cu6Sn5 grains happened. According to this study, the critical grain size was determined to be about 2 μm.
机译:研究了Ag3Sn颗粒在Sn-3.5AgxCu / Cu(x = 0,0.7,1.5 wt。%)界面形成的金属间化合物(IMC)表面的吸收行为。 Sn-3.5Ag-xCu / Cu焊点是通过在260℃下进行不同时间的回流焊制备的。 X射线衍射结果表明,在Sn-3.5AgxCu / Cu界面形成的主要IMC为Cu6Sn5。对于Sn-3.5Ag / Cu和Sn-3.5Ag-0.7Cu / Cu接头,当回流时间分别达到120s和60s时,除了Cu6Sn5外,在界面处还发现了Ag3Sn颗粒。尽管在本研究的所有回流时间内,始终在Sn-3.5Ag-1.5Cu / Cu界面处检测到Ag3Sn颗粒。为了观察界面IMC的形态,进行了扫描电子显微镜。发现随着Cu6Sn5晶粒尺寸的增加,Ag3Sn颗粒的吸收量增加。在凝固过程中,Ag3Sn颗粒可对界面Cu6Sn5晶粒起到表面能降低剂的作用。 Ag3Sn颗粒在Cu6Sn5晶粒上的吸收行为应具有临界晶粒尺寸。根据这项研究,确定的临界晶粒尺寸约为2μm。

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  • 会议地点 Beijing(CN)
  • 作者单位

    School of Materials Science and Engineering, Dalian University of Technology, 2 Linggong Road, Dalian 116024, China Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China;

    School of Materials Science and Engineering, Dalian University of Technology, 2 Linggong Road, Dalian 116024, China;

    Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China;

    Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China;

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  • 正文语种 eng
  • 中图分类 包装工程;
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