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Electric connecting structure comprising preferred oriented Cu6Sn5 grains and method for fabricating the same
Electric connecting structure comprising preferred oriented Cu6Sn5 grains and method for fabricating the same
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机译:包含优选取向的Cu6Sn5晶粒的电连接结构及其制造方法
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摘要
An electric connecting structure comprising preferred oriented Cu6Sn5 grains and a method for fabricating the same are disclosed. The method of the present invention comprises steps: (A) providing a first substrate; (B) forming a first nano-twinned copper layer on part of a surface of the first substrate; (C) using a solder to connect the first substrate with a second substrate having a second electrical pad, in which the second electrical pad comprises a second nano-twinned copper layer, and the solder locates between the first nano-twinned copper layer and the second nano-twinned copper layer; and (D) reflowing at the temperature of 200° C. to 300° C. to transform at least part of the solder into an intermetallic compound (IMC) layer, in which the IMC layer comprises plural Cu6Sn5 grains with a preferred orientation; wherein at least 50% in volume of the first and second nano-twinned copper layer comprises plural grains.
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机译:公开了一种包括优选取向的Cu 6 Sub> Sn 5 Sub>晶粒的电连接结构及其制造方法。本发明的方法包括以下步骤:(A)提供第一衬底; (B)在第一基板的一部分表面上形成第一纳米孪晶铜层; (C)使用焊料将第一基板与具有第二电焊盘的第二基板连接,其中第二电焊盘包括第二纳米孪晶铜层,并且焊料位于第一纳米孪晶铜层与第二纳米孪晶铜层之间。第二纳米孪晶铜层; (D)在200℃至300℃的温度下回流以将至少一部分焊料转变成金属间化合物(IMC)层,其中IMC层包括多个Cu 6 Sub > Sn 5 Sub>具有首选方向的晶粒;其中第一和第二纳米孪晶铜层的至少50体积%包含多个晶粒。
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