Comparison of SOI, poly-Si TFT and bulk Si MOS performance using gin/ID methodology

摘要

The poly-Si TFT is a member of the SOI family which recently achieves higher levels of performance and integration onto glass substrate. However, in the TFT analogue circuit fields, a systematic design methodology is still lacking. Standard SOI or bulk Si analog design techniques can not be directly extended to TFT because of the unique Ⅰ-Ⅴ characteristics caused by trap effects in TFT. In this work we modified the gm/Id analog design methodology to extend it to TFT technology. The comparison of analog performance of various technologies, i.e. bulk silicon, SOI and TFT, has been made through the common-source amplifier case.