DIRECT INJECTION CHEMICAL VAPOR DEPOSITION OF TEXTURED ZIRCONIUM OXIDE FILMS

摘要

Zirconia (ZrO_2) thin films were deposited on (100)Si substrates by metal organic chemical vapor deposition (MOCVD) in a cold wall reactor using direct injection process of β-diketonates precursors. Oxide growth was observed over a temperature range from 700 to 900℃ and a wide pressure range from 100 to 2000 Pa. The oxide films were characterized by field emission microscopy (FEM), atomic force microscopy (AFM), X-ray diffraction (XRD). Some process conditions that lead to smooth, fine grained textured films were drawn out. The tetragonal (200) and (002) textured films might promote further epitaxial growth on