首页> 外文会议>Electrochemical Society Meeting and International Symposium on Chemical Vapor Deposition XVI and EUROCVD 14 Conference v.1; 20030427-20030502; Paris; FR >Local Deposition Rates of α-Al_2O_3 from AlCb-CO_2-H_2-HCl Derived with PHOENICS-CVD from Thermogravimetric Measurements in a Hot-Wall Reactor with Long Isothermal Zone
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Local Deposition Rates of α-Al_2O_3 from AlCb-CO_2-H_2-HCl Derived with PHOENICS-CVD from Thermogravimetric Measurements in a Hot-Wall Reactor with Long Isothermal Zone

机译:PHOENICS-CVD法在长等温区热壁反应器中通过热重法测得的AlCb-CO_2-H_2-HCl中α-Al_2O_3的局部沉积速率

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摘要

Uniform coating of substrates with complex geometry requires detailed knowledge of the deposition rate as a function of partial pressures, temperature, flow rate, residence time of the precursor gas in the hot zone and location of the sample in the reactor. Thermogravimetric rate measurements have been carried out on the deposition of α-Al_2O_3 from AlCl_3-CO_2-H_2-HCl-Ar mixtures at 100 mbar and 900...1200℃ in a vertical hot-wall CVD reactor with a 450 mm isothermal zone. The experimental data have been summarized in an Arrhenius-type equation which was then used in the PHOENICS-CVD software package to predict local deposition rates and to define conditions for highly uniform alumina deposition.
机译:具有复杂几何形状的基板的均匀涂层需要详细了解沉积速度与分压,温度,流速,前体气体在热区中的停留时间以及样品在反应器中的位置的关系。在具有450 mm等温区的垂直热壁CVD反应器中,在100 mbar和900 ... 1200℃下,从AlCl_3-CO_2-H_2-HCl-Ar混合物中沉积α-Al_2O_3进行了热重速率测量。实验数据已汇总为Arrhenius型方程式,然后将其用于PHOENICS-CVD软件包中以预测局部沉积速率并定义高度均匀的氧化铝沉积条件。

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