IMPROVED PERFORMANCE WITH LOW TEMPERATURE SILICON NITRIDE SPACER PROCESS

摘要

Low-temperature bis(tertiary-butylamino)silane (BTBAS)-based low pressure chemical vapor deposition (LPCVD) silicon dioxide liner and nitride spacers films were applied to 90nm and 120nm technologies. These films showed significant device performance improvement over tetra(ethoxy)silane (TEOS)-based silicon dioxide liner and dichlorosilane (DCS)-based silicon nitride spacers films. BTBAS-based film uniformity and properties are similar to TEOS-based silicon dioxide and DCS- based silicon nitride process films. The performance improvement is attributed to the lower thermal budget of BTBAS-based film deposition and the BTBAS-based silicon nitride film characteristics. The BTBAS-based silicon dioxide and silicon nitride LPCVD deposition processes, film properties and device results are discussed in this paper.