Effect of UV Illumination on Inverted-Staggered a-Si:H Thin Film Transistors

机译：紫外线照射对倒置交错a-Si：H薄膜晶体管的影响

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The hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT''s) have been widely used as switching devices for large-area electronics, such as active matrix liquid crystal displayers. Effect of UV Illumination on improving device switching charac

机译：氢化非晶硅薄膜晶体管（a-Si：H TFT's）已被广泛用作大面积电子设备（例如有源矩阵液晶显示器）的开关器件。紫外线照明对改善器件开关特性的影响

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《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on》|2007年|P.225-228|共4页
会议地点 TainanTaiwan
作者
Yiming Li; Jen-Chung Lou; Chung-Le Chen; Chih-Hong Hwang; Shuoting Yan;
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Fermi level; switching circuits; thin film transistors; ultraviolet radiation effects; Fermi level; UV illumination; large-area electronics; switching devices; thin film transistors;

机译：费米水平开关电路；薄膜晶体管；紫外线辐射作用；费米水平紫外线照明大面积电子产品；开关设备；薄膜晶体管;

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专利

1. Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD [J] . Yang C.S., Read W.W. IEEE Electron Device Letters . 1998,第6期

机译：使用选择性区域硅PECVD制造的反交错a-Si：H薄膜晶体管中的自对准栅极和源极漏极接触
2. UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin-Film Transistors [J] . Yiming Li, Chih-Hong Hwang, Chung-Le Chen, IEEE Transactions on Electron Devices . 2008,第11期

机译：减少a-Si：H薄膜晶体管漏电流的UV照明技术
3. Abnormal Behavior of Threshold Voltage Shift in Bias-Stressed a-Si:H Thin Film Transistor under Extremely High Intensity Illumination [J] . Han Sang Youn, Park Kyung Tea, Kim Cheolkyu, ACS applied materials & interfaces . 2015,第28期

机译：偏高强度a-Si：H薄膜晶体管在极高强度照明下阈值电压漂移的异常行为
4. Effect of UV Illumination on Inverted-Staggered a-Si:H Thin Film Transistors [C] . Yiming Li, Jen-Chung Lou, Chung-Le Chen, IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：UV照明对倒置交错的A-Si：H薄膜晶体管的影响
5. Post processing Treatment of InGaZnO Thin Film Transistors for Improved Bias-Illumination Stress Reliability. [D] . Ruhul Hasin, Muhammad. 2013

机译：InGaZnO薄膜晶体管的后处理，以改善偏置照明应力的可靠性。
6. Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation [O] . Kyungsoo Jang, Youngkuk Kim, Pham Duy Phong, 2019

机译：具有a-Si：H表面钝化的P沟道LTPS薄膜晶体管的电性能改善
7. Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Flexible Plastic Film and Metal Foil Substrates: Critical Challenges and Enabling Solutions [O] . 2008

机译：柔性塑料薄膜和金属箔基板上的A-Si：H薄膜晶体管阵列的直接制造：关键挑战和启用解决方案
8. Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Plastic and Metal Foils for Flexible Displays [R] . O'Rourke, S. M., Loy, D. E., Moyer, C., 2008

机译：在柔性显示器的塑料和金属箔上直接制造a-si：H薄膜晶体管阵列

Effect of UV Illumination on Inverted-Staggered a-Si:H Thin Film Transistors

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