Method for manufacture of fully self-aligned tri-layer a-Si:H thin film transistors

摘要

The method of the invention configures a tri-layer thin film transistor (TFT) on a substrate, the TFT including a stack including a gate electrode supported by the substrate, followed by a first layer of insulator, a layer of semiconductor and a second layer of insulator. The method employs a first step of illumination through the substrate, as shadowed by said gate electrode, to enable a patterning of the second layer of insulator into an insulator patch which is aligned with the gate electrode. A next step of illumination through the substrate, as shadowed by said gate electrode, enables a patterning of metallization contacts for the TFT in alignment with the insulator patch.