STI HDP-CVD Oxide Gap-fill for 0.1um and Beyond CMOS Technology

摘要

In this article, the evolution of the 0.10um STI oxide gap-fill from 0.13um technology is studied and the process differences between them are discussed. For the aggressive design rule in 0.1um and beyond generations, moderate bias RF power, high source RF power, lower pressure, and suitable helium flow are needed. Void-free gap-fill down to 0.12um trench spacing and aspect ratio of above 4 in wafer center and edge is achieved after process optimizations.