Profile measurement of thin films by linear wavenumber-scanning interferometry

摘要

Conventional methods to measure the positions of the front and rear surfaces of thin films with multiple-wavelength interferometers are reviewed to make it clear how the method proposed here is novel and simple. Characteristics of the linear wavenumber-scanning interferometry used in the proposed method are analyzed in detail to make the measurement accuracy clearly. The positions of the front and rear surfaces of a silicon dioxide film with 4um thickness is measured by utilizing the phases of the sinusoidal waves forms corresponding to each of the optical path differences contained in the interference signal. The experiments and the theoretical analysis show that the measurement error is about 15 nm.