High-k oxides on InAs 100 and 111B surfaces

机译：InAs 100和111B表面的高k氧化物

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Al_2O_3 and HfO_2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO_2 and Al_2O_3 show similar D_(it) profiles, with a D_(it) minimum around 2×10~(12) eV~(-1)cm~(-2).

机译：已经研究了在InAs 100和111B表面上通过原子层沉积法沉积的Al_2O_3和HfO_2高k氧化物。通过使用低频拟合例程，已提取了界面缺陷密度。通常，HfO_2和Al_2O_3都显示相似的D_（it）轮廓，D_（it）最小值在2×10〜（12）eV〜（-1）cm〜（-2）左右。

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《Dielectrics for nanosystems 5: materials science, processing, reliability, and manufacturing -and- tutorials in nanotechnology: more than moore - beyond CMOS emerging materials and devices.》|2012年|p.61-67|共7页
会议地点 Seattle WA(US);Seattle WA(US)
作者
E. Lind; J. Wu; L. -E. Wernersson;
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Department of Electrical and Information Technology, Lund University, Lund, Sweden;

Department of Electrical and Information Technology, Lund University, Lund, Sweden;

Department of Electrical and Information Technology, Lund University, Lund, Sweden;

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原文格式 PDF
正文语种 eng
中图分类材料;材料;
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High-k oxides on InAs 100 and 111B surfaces

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