Process dependent antenna ratio rules for HSQ and FSG back-ends of (embedded flash) 0.18 μm CMOS technology

摘要

The charging damage induced by the inter-metal dielectric deposition in a hydrogen silsequioxane (HSQ) and in a fluorinated-silica glass (FSG) now are compared in a worst case scenario experiment, carried out in a 0.18 μm embedded flash process. It is shown that different charging damage mechanisms take place in the two flows, calling for different definitions of antenna ratios and different antenna design rules. It is also shown that non-volatile memory arrays are much less susceptible to charging damage than the logic part of the IC.