Abstract: The preparation of polycrystalline GaAs films by using electrodeposition technology is described. Influences of electrodeposition parameters on the quality of films were discussed, such as the current density, the relative concentration of ions, the value of pH of the electrolyte. On the basis of observing the micrographs, we have measured the chemical composition, microstructure and parameters of the energy band of the films. The result show that the composition of the films deposited is Ga$-0.9946$/ As$- 1.0054$/, and the direct gap nature of the deposited material, its band gap is 1.40eV. !5
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