Exploiting expendable process-margins in DRAMs for run-time performance optimization

摘要

Manufacturing-time process (P) variations and runtime voltage (V) and temperature (T) variations can affect a DRAM's performance severely. To counter these effects, DRAM vendors provide substantial design-time PVT timing margins to guarantee correct DRAM functionality under worst-case operating conditions. Unfortunately, with technology scaling these timing margins have become large and very pessimistic for a majority of the manufactured DRAMs. While run-time variations are specific to operating conditions and as a result, their margins difficult to optimize, process variations are manufacturing-time effects and excessive process-margins can be reduced at run-time, on a per-device basis, if properly identified. In this paper, we propose a generic post-manufacturing performance characterization methodology for DRAMs that identifies this excess in process-margins for any given DRAM device at runtime, while retaining the requisite margins for voltage (noise) and temperature variations. By doing so, the methodology ascertains the actual impact of process-variations on the particular DRAM device and optimizes its access latencies (timings), thereby improving its overall performance. We evaluate this methodology on 48 DDR3 devices (from 12 DIMMs) and verify the derived timings under worst-case operating conditions, showing up to 33.3% and 25.9% reduction in DRAM read and write latencies, respectively.