Three-terminal MTJ-based nonvolatile logic circuits with self-terminated writing mechanism for ultra-low-power VLSI processor

摘要

Magnetic-Tunnel Junction (MTJ)-based non-volatile logic circuits have some possibility to solve the power-dissipation problem seriously focusing on the present CMOS-only-based VLSI processors. Three terminal MTJ devices are the promising candidate as nonvolatile storage device to realize such a nonvolatile logic circuit. However, its writing energy is still serious in comparison with conventional CMOS-only-based logic circuits. In this paper, a new MTJ-based nonvolatile logic circuit with self-terminated mechanism is proposed and its energy efficiency is evaluated in comparison with the corresponding previous work. In addition, some recent research topics related to MTJ-based nonvolatile logic-circuit design and its application, such as a computer-aided-design (CAD) tool considering a stochastic MTJ-switching behavior and the application to a resilient “die-hard” VLSI processor against sudden power-supply outage, are also demonstrated.