IM2NP (UMR 6242) - Aix-Marseille Univ, 13397 Marseille Cedex 20, France;
Department of Physics, American University of Beirut, Riad El-Solh 1107 2020, Beirut, Lebanon;
IM2NP (UMR 6242) - Aix-Marseille Univ, 13397 Marseille Cedex 20, France;
Aalto University, FI-00076 Aalto, Finland;
CEA LETI/MINATEC, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France;
lon Beam Services, rue Gaston Imbert Prolongee, 13790 Peynier, France;
lon Beam Services, rue Gaston Imbert Prolongee, 13790 Peynier, France;
IM2NP (UMR 6242) - Aix-Marseille Univ, 13397 Marseille Cedex 20, France;
ion implantation; plasma; silicon carbide; nitrogen; infrared; free carriers; defects;
机译:4H-SiC外延层中标准原子注入和等离子体注入氮原子产生的缺陷的研究
机译:退火和离子注入的4H-SiC外延层中引起的扩展缺陷
机译:C端接的4H-SiC(0001′)表面合成的外延石墨烯层的结构缺陷-透射电子显微镜和密度泛函理论研究
机译:4H-SIC外延层中氮原子标准化和血浆植入产生的缺陷研究
机译:基于4H-SiC N型外延层和像素Cdznte单晶装置的高分辨率辐射检测器
机译:低压对4H-SiC外延层表面粗糙度和形貌缺陷的影响
机译:4H-SIC外延层的深度缺陷